maximum ratings: (t c =25c) symbol tip41 TIP41A tip41b tip41c units collector-base voltage v cbo 40 60 80 100 v collector-emitter voltage v ceo 40 60 80 100 v emitter-base voltage v ebo 5.0 v continuous collector current i c 6.0 a peak collector current i cm 10 a continuous base current i b 2.0 a power dissipation p d 65 w power dissipation (t a =25c) p d 2.0 w operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i ceo v ce =30v (tip41, TIP41A) 0.7 ma i ceo v ce =60v (tip41b, tip41c) 0.7 ma i ces v ce =rated v ceo 0.4 ma i ebo v eb =5.0v 1.0 ma bv ceo i c =30ma (tip41) 40 v bv ceo i c =30ma (TIP41A) 60 v bv ceo i c =30ma (tip41b) 80 v bv ceo i c =30ma (tip41c) 100 v v ce(sat) i c =6.0a, i b =0.6a 1.5 v v be(on) v ce =4.0v, i c =6.0a 2.0 v h fe v ce =4.0v, i c =0.3a 30 h fe v ce =4.0v, i c =3.0a 15 75 h fe v ce =10v, i c =0.5a, f=1.0khz 20 f t v ce =10v, i c =0.5a, f=1.0mhz 3.0 mhz t on i c =6.0a, i b1 = i b2 =0.6a, r l =5.0 0.6 s t off i c =6.0a, i b1 = i b2 =0.6a, r l =5.0 1.0 s tip41 TIP41A tip41b tip41c npn silicon power transistor description: the central semiconductor tip41 series types are npn epitaxial-base silicon power transistors designed for power amplifier and high speed switching applications. marking: full part number to-220 case r1 (13-december 2010) www.centralsemi.com
tip41 TIP41A tip41b tip41c npn silicon power transistor to-220 case - mechanical outline lead code: 1) base 2) collector 3) emitter tab) collector marking: full part number www.centralsemi.com r1 (13-december 2010)
|
